sep.2000 b c f d q a s s g k l m e e h h p - dia. (2 typ.) r - m5 thd (3 typ.) n c2e1 j n jj c1 e2 g1 e1 e2 g2 e1 c1 e2 tab#110 t=0.5 g1 e2 g2 c2e1 dimensions inches millimeters a 3.70 94.0 b 3.150 0.01 80.0 0.25 c 1.89 48.0 d 1.18 max. 30.0 max. e 0.90 23.0 f 0.83 21.2 g 0.71 18.0 h 0.67 17.0 j 0.63 16.0 dimensions inches millimeters k 0.51 13.0 l 0.47 12.0 m 0.30 7.5 n 0.28 7.0 p 0.256 dia. dia. 6.5 q 0.31 8.0 r m5 metric m5 s 0.16 4.0 description: mitsubishi igbt modules are de- signed for use in switching applica- tions. each module consists of two igbts in a half-bridge configuration with each transistor having a re- verse-connected super-fast recov- ery free-wheel diode. all compo- nents and interconnects are iso- lated from the heat sinking base- plate, offering simplified system as- sembly and thermal management. features: u low drive power u low v ce(sat) u discrete super-fast recovery free-wheel diode u high frequency operation u isolated baseplate for easy heat sinking applications: u ac motor control u motion/servo control u ups u welding power supplies ordering information: example: select the complete part module number you desire from the table below -i.e. CM150DY-24H is a 1200v (v ces ), 150 ampere dual igbt module. type current rating v ces amperes volts (x 50) cm 150 24 mitsubishi igbt modules CM150DY-24H high power switching use insulated type outline drawing and circuit diagram
sep.2000 absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units junction temperature t j C40 to 150 c storage temperature t stg C40 to 125 c collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25 c) i c 150 amperes peak collector current i cm 300* amperes emitter current** (t c = 25 c) i e 150 amperes peak emitter current** i em 300* amperes maximum collector dissipation (t c = 25 c, t j 150 c) p c 1100 w atts mounting torque, m5 main terminal C 1.47 ~ 1.96 n m mounting torque, m6 mounting C 1.96 ~ 2.94 n m weight C 270 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms *pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v C C 0.5 m a gate-emitter threshold voltage v ge(th) i c = 15ma, v ce = 10v 4.5 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 150a, v ge = 15v C 2.5 3.4** volts i c = 150a, v ge = 15v, t j = 150 c C 2.25 C volts total gate charge q g v cc = 600v, i c = 150a, v ge = 15v C 750 C nc emitter-collector voltage v ec i e = 150a, v ge = 0v C C 3.5 volts ** pulse width and repetition rate should be such that device junction temperature rise is negligible. dynamic electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies C C 30 nf output capacitance c oes v ge = 0v, v ce = 10v C C 10.5 nf reverse transfer capacitance c res C C 6 nf resistive turn-on delay time t d(on) C C 250 ns load rise time t r v cc = 600v, i c = 150a, C C 350 ns switching turn-off delay time t d(off) v ge1 = v ge2 = 15v, r g = 2.1 w C C 300 ns times fall time t f C C 350 ns diode reverse recovery time t rr i e = 150a, di e /dt = C300a/ m s C C 250 ns diode reverse recovery charge q rr i e = 150a, di e /dt = C300a/ m s C 1.11 C m c thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) per igbt C C 0.11 c/w thermal resistance, junction to case r th(j-c) per fwdi C C 0.24 c/w contact thermal resistance r th(c-f) per module, thermal grease applied C C 0.065 c/w mitsubishi igbt modules CM150DY-24H high power switching use insulated type
sep.2000 mitsubishi igbt modules CM150DY-24H high power switching use insulated type collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 300 0246810 150 50 0 v ge = 20v 15 12 11 8 7 t j = 25 o c 100 200 250 10 9 gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 300 048121620 200 150 100 50 0 v ce = 10v t j = 25 c t j = 125 c 250 collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 5 0 50 100 150 200 300 4 3 2 1 0 250 v ge = 15v t j = 25 c t j = 125 c gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 048121620 8 6 4 2 0 t j = 25 c i c = 60a i c = 300a i c = 150a emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) emitter current, i e , (amperes) collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 2 10 1 10 0 10 -1 v ge = 0v 10 1 c ies c oes c res emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 1 10 2 10 3 10 2 10 3 t rr i rr di/dt = -300a/ m sec t j = 25 c 10 1 10 0 reverse recovery current, i rr , (amperes) 10 1 10 2 gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 200 400 600 800 1000 16 12 8 4 0 v cc = 400v i c = 150a 1200 v cc = 600v collector current, i c , (amperes) half-bridge switching characteristics (typical) switching time, (ns) 10 1 10 3 7 5 3 2 1.0 1.5 2.0 10 2 7 5 3 2 2.5 3.0 3.5 t j = 25 c 10 1 10 3 7 5 3 2 10 1 23 57 10 2 10 2 7 5 3 2 23 57 10 3 t d(off) v cc = 600v v ge = 15v r g = 2.1 w t j = 125 c t d(on) t f t r
sep.2000 mitsubishi igbt modules CM150DY-24H high power switching use insulated type time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.11 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.24 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3
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